Hall Effect in a Doped Mott Insulator: DMFT Approximation
نویسندگان
چکیده
In the framework of dynamical mean-field theory, we analyze Hall effect in a doped Mott insulator as parent cuprate superconductor. We consider partial filling (hole doping) lower Hubbard band and calculate dependence coefficient number on hole doping, determining critical concentration for sign change coefficient. Significant temperature is noted. Good agreement demonstrated with obtained experiments normal state YBCO.
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ژورنال
عنوان ژورنال: Jetp Letters
سال: 2022
ISSN: ['1090-6487', '0021-3640']
DOI: https://doi.org/10.1134/s002136402220036x